APTC60HM70T1G APTC60HM70T1G ? rev 0 august, 2007 www.microsemi.com 1 ? 6 79 1 4 ntc 11 810 12 3 6 q1 q2 5 q4 q3 2 pins 3/4 must be shorted together absolute maximum ratings these devices are sensitive to electrostatic disc harge. proper handling proc edures should be followed. see application note apt0502 on www.microsemi.com symbol parameter max ratings unit v dss drain - source breakdown voltage 600 v t c = 25c 39 i d continuous drain current t c = 80c 29 i dm pulsed drain current 160 a v gs gate - source voltage 20 v r dson drain - source on resistance 70 m ? p d maximum power dissipation t c = 25c 250 w i ar avalanche current (repetitive and non repetitive) 20 a e ar repetitive avalanche energy 1 e as single pulse avalanche energy 1800 mj application ? welding converters ? switched mode power supplies ? uninterruptible power supplies ? motor control features ? - ultra low r dson - low miller capacitance - ultra low gate charge - avalanche energy rated - very rugged ? very low stray inductance - symmetrical design ? internal thermistor for temperature monitoring ? high level of integration benefits ? outstanding performance at high frequency operation ? direct mounting to heatsink (isolated package) ? low junction to case thermal resistance ? solderable terminals both for power and signal for easy pcb mounting ? low profile ? each leg can be easily paralleled to achieve a phase leg of twice the current capability ? rohs compliant full - bridge super junction mosfet power module v dss = 600v r dson = 70m ? max @ tj = 25c i d = 39a @ tc = 25c
APTC60HM70T1G APTC60HM70T1G ? rev 0 august, 2007 www.microsemi.com 2 ? 6 all ratings @ t j = 25c unless otherwise specified electrical characteristics symbol characteristic test conditions min typ max unit v gs = 0v,v ds = 600v t j = 25c 25 i dss zero gate voltage drain current v gs = 0v,v ds = 600v t j = 125c 250 a r ds(on) drain ? source on resistance v gs = 10v, i d = 39a 70 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 2.7ma 2.1 3 3.9 v i gss gate ? source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics symbol characteristic test conditions min typ max unit c iss input capacitance 7 c oss output capacitance 2.56 c rss reverse transfer capacitance v gs = 0v v ds = 25v f = 1mhz 0.21 nf q g total gate charge 259 q gs gate ? source charge 29 q gd gate ? drain charge v gs = 10v v bus = 300v i d = 39a 111 nc t d(on) turn-on delay time 21 t r rise time 30 t d(off) turn-off delay time 283 t f fall time inductive switching @ 125c v gs = 15v v bus = 400v i d = 39a r g = 5 ? 84 ns e on turn-on switching energy 670 e off turn-off switching energy inductive switching @ 25c v gs = 15v, v bus = 400v i d = 39a, r g = 5 ? 980 j e on turn-on switching energy 1096 e off turn-off switching energy inductive switching @ 125c v gs = 15v, v bus = 400v i d = 39a, r g = 5 ? 1206 j source - drain diode ratings and characteristics symbol characteristic test conditions min typ max unit tc = 25c 39 i s continuous source current (body diode) tc = 80c 29 a v sd diode forward voltage v gs = 0v, i s = - 39a 1.2 v dv/dt peak diode recovery x 6 v/ns t rr reverse recovery time t j = 25c 580 ns q rr reverse recovery charge i s = - 39a v r = 350v di s /dt = 100a/s t j = 25c 23 c x dv/dt numbers reflect the limitations of the circuit rather than the device itself. i s - 39a di/dt 100a/s v r v dss t j 150c
APTC60HM70T1G APTC60HM70T1G ? rev 0 august, 2007 www.microsemi.com 3 ? 6 thermal and package characteristics symbol characteristic min typ max unit r thjc junction to case thermal resistance 0.5 c/w v isol rms isolation voltage, any terminal to case t =1 min, i isol<1ma, 50/60hz 2500 v t j operating junction temperature range -40 150 t stg storage temperature range -40 125 t c operating case temperature -40 100 c torque mounting torque to heatsink m4 2.5 4.7 n.m wt package weight 80 g temperature sensor ntc (see application note apt0406 on www.microsemi.com for more information). symbol characteristic min typ max unit r 25 resistance @ 25c 50 k ? b 25/85 t 25 = 298.15 k 3952 k ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? = t t b r r t 1 1 exp 25 85 / 25 25 sp1 package outline (dimensions in mm) see application note 1904 - mounting instructions for sp1 power modules on www.microsemi.com t: thermistor temperature r t : thermistor value at t
APTC60HM70T1G APTC60HM70T1G ? rev 0 august, 2007 www.microsemi.com 4 ? 6 typical performance curve 0.9 0.7 0.5 0.3 0.1 0.05 single pulse 0 0.1 0.2 0.3 0.4 0.5 0.6 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular pulse duration (seconds) thermal impedance (c/w) maximum effective transient thermal impedance, junction to case vs pulse duration 4v 4.5v 5v 5.5v 6v 6.5v 0 40 80 120 160 200 0 5 10 15 20 25 v ds , drain to source voltage (v) i d , drain current (a) v gs =15&10v low voltage output characteristics transfert characteristics t j =25c t j =125c 0 20 40 60 80 100 120 140 01234567 v gs , gate to source voltage (v) i d , drain current (a) v ds > i d (on)xr ds (on)max 250s pulse test @ < 0.5 duty cycle r ds (on) vs drain current v gs =10v v gs =20v 0.9 0.95 1 1.05 1.1 0 102030405060 i d , drain current (a) r ds (on) drain to source on resistance normalized to v gs =10v @ 19.5a 0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 t c , case temperature (c) i d , dc drain current (a) dc drain current vs case temperature
APTC60HM70T1G APTC60HM70T1G ? rev 0 august, 2007 www.microsemi.com 5 ? 6 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150 t j , junction temperature (c) breakdown voltage vs temperature bv dss , drain to source breakdown voltage (normalized) on resistance vs temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 t j , junction temperature (c) r ds (on), drain to source on resistance (normalized) v gs =10v i d = 39a threshold voltage vs temperature 0.6 0.7 0.8 0.9 1.0 1.1 25 50 75 100 125 150 t c , case temperature (c) v gs (th), threshold voltage (normalized) maximum safe operating area 10 ms 1 ms 100 s 1 10 100 1000 1 10 100 1000 v ds , drain to source voltage (v) i d , drain current (a) limited b y r ds on single pulse t j =150c t c =25c ciss crss coss 10 100 1000 10000 100000 0 1020304050 v ds , drain to source voltage (v) c, capacitance (pf) capacitance vs drain to source voltage v ds =120v v ds =300v v ds =480v 0 2 4 6 8 10 12 14 0 50 100 150 200 250 300 gate charge (nc) v gs , gate to source voltage (v) gate charge vs gate to source voltage i d =39a t j =25c
APTC60HM70T1G APTC60HM70T1G ? rev 0 august, 2007 www.microsemi.com 6 ? 6 t j =25c t j =150c 1 10 100 1000 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd , source to drain voltage (v) i dr , reverse drain current (a) source to drain diode forward voltage delay times vs current td(on) td(off) 0 50 100 150 200 250 300 350 0 10203040506070 i d , drain current (a) t d(on) and t d(off) (ns) v ds =400v r g =5 ? t j =125c l=100h rise and fall times vs current t r t f 0 20 40 60 80 100 120 0 10203040506070 i d , drain current (a) t r and t f (ns) v ds =400v r g =5 ? t j =125c l=100h switching energy vs current e on e off e off 0 0.5 1 1.5 2 2.5 0 10203040506070 i d , drain current (a) switching energy (mj) v ds =400v r g =5 ? t j =125c l=100h e on e off 0 1 2 3 4 5 0 5 10 15 20 25 30 35 40 45 50 gate resistance (ohms) switching energy (mj) switching energy vs gate resistance v ds =400v i d =39a t j =125c l=100h hard switching zcs zvs 0 20 40 60 80 100 120 140 5 101520253035 i d , drain current (a) frequency (khz) operating frequency vs drain current v ds =400v d=50% r g =5 ? t j =125c t c =75c ?coolmos? comprise a new family of transistors developed by in fineon technologies ag. ?coolmos? is a trademark of infineon technologies ag?. microsemi reserves the right to change, without notice, the specifications and info rmation contained herein microsemi's products are covered by one or more of u.s pa tents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. u.s and foreign pa tents pending. all rights reserved.
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